features trenchfet power mosfet 100% r g tested applications battery switch load switch pb-free available SI4410BDY vishay siliconix document number: 72211 s-50366?rev. c, 28-feb-05 www.vishay.com 1 n-channel 30-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) 30 0.0135 @ v gs = 10 v 10 30 0.020 @ v gs = 4.5 v 8 so-8 sd sd sd gd 5 6 7 8 top view 2 3 4 1 n-channel mosfet g d s ordering information: SI4410BDY SI4410BDY?t1 (with tape and reel) SI4410BDY?e3 (lead (pb)-free) SI4410BDY-t1?e3 (lead (pb)-free with tape and reel) absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 10 secs steady state unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d 10 7.5 continuous drain current (t j = 150 c) a t a = 70 c i d 8 6 a pulsed drain current (10 s pulse width) i dm 50 a continuous source current (diode conduction) a i s 2.3 1.26 maximum power dissipation a t a = 25 c p d 2.5 1.4 w maximum power dissipation a t a = 70 c p d 1.6 0.9 w operating junction and storage temperature range t j , t stg ? 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 10 sec r 40 50 maximum junction-to-ambient a steady state r thja 70 90 c/w maximum junction-to-foot (drain) steady state r thjf 25 30 c/w notes a. surface mounted on 1? x 1? fr4 board.
SI4410BDY vishay siliconix www.vishay.com 2 document number: 72211 s-50366?rev. c, 28-feb-05 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 3.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v, t j = 55 c 5 a on-state drain current a i d(on) v ds 5 v, v gs = 10 v 20 a drain - source on - state resistance a r ds(on) v gs = 10 v, i d = 10 a 0.011 0.0135 d r ain - so ur ce on - state resistance a r ds(on) v gs = 4.5 v, i d = 5 a 0.0165 0.020 forward transconductance a g fs v ds = 15 v, i d = 10 a 25 s diode forward voltage a v sd i s = 2.3 a, v gs = 0 v 0.76 1.1 v dynamic b gate charge q g v ds = 15 v, v gs = 5 v, i d = 10 a 13 20 total gate charge q gt 25 40 nc gate-source charge q gs v ds = 15 v, v gs = 10 v, i d = 10 a 5.5 n c gate-drain charge q gd ds 5, gs 0, d 0 3.7 gate resistance r g f = 1 mhz 0.5 1.6 2.7 turn-on delay time t d(on) 10 15 rise time t r v dd = 25 v, r l = 25 10 15 turn-off delay time t d(off) v dd = 25 v , r l = 25 i d 1 a, v gen = 10 v, r g = 6 40 60 ns fall time t f 15 25 source-drain reverse recovery time t rr i f = 2.3 a, di/dt = 100 a/ s 35 70 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratin gs only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typical characteristics (25 c unless noted) 0 10 20 30 40 50 012345 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs = 10 thru 5 v 25 c t c = 125 c ? 55 c 3 v output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d 4 v 2 v
SI4410BDY vishay siliconix document number: 72211 s-50366?rev. c, 28-feb-05 www.vishay.com 3 typical characteristics (25 c unless noted) 0 400 800 1200 1600 2000 0 6 12 18 24 30 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0 1020304050 0 2 4 6 8 10 0 5 10 15 20 25 0.0 0.4 0.8 1.2 1.6 2.0 ? 50 ? 25 0 25 50 75 100 125 150 c rss v ds = 15 v i d = 10 a v gs = 10 v i d = 10 a v gs = 10 v gate charge on-resistance vs. drain current ? gate-to-source voltage (v) q g ? total gate charge (nc) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs ? on-resistance ( r ds(on) ) i d ? drain current (a) capacitance on-resistance vs. junction temperature t j ? junction temperature ( c) v gs = 4.5 v 1.0 1.2 0.00 0.02 0.04 0.06 0.08 0.10 0246810 1 10 50 i d = 10 a 0.00 0.2 0.4 0.6 0.8 t j = 25 c t j = 150 c source-drain diode forward voltage on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) ? source current (a) i s c oss c iss r ds(on) ? on-resiistance (normalized)
SI4410BDY vishay siliconix www.vishay.com 4 document number: 72211 s-50366?rev. c, 28-feb-05 typical characteristics (25 c unless noted) v ds ? drain-to-source voltage (v) *v gs minimum v gs at which r ds(on) is specified 0 30 50 10 20 power (w) single pulse power time (sec) 40 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 70 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 1 100 600 10 10 ? 1 10 ? 2 ? 1.0 ? 0.8 ? 0.6 ? 0.4 ? 0.2 0.0 0.2 0.4 0.6 ? 50 ? 25 0 25 50 75 100 125 150 i d = 250 a threshold voltage variance (v) v gs(th) t j ? temperature ( c) safe operating area, junction-to-case 100 1 0.1 1 10 100 0.01 10 1 s 0.1 t a = 25 c single pulse 10 ms 100 ms dc, 100 s *r ds(on) limited 10 s t a = 25 c 1 ms 100 s, 10 s
SI4410BDY vishay siliconix document number: 72211 s-50366?rev. c, 28-feb-05 www.vishay.com 5 typical characteristics (25 c unless noted) 10 ? 3 10 ? 2 110 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at on e of several qualified locati ons. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related docu ments such as package/tape drawings, par t marking, and reliability data, see http://www.vishay.com/ppg?72211 .
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